Um Clifton as

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Clifton has developed an industrially stable process for gallium arsenide Liquid Phase Epitaxy, and is using it to manufacture dies for high temperature ultra-fast recovery PIN power diodes. Compared to conventional Silicon diodes, GaAs has superior performance characteristics, including: * higher maximum junction temperature (up to +260 Celsius) * temperature independent dynamic recovery characteristics * lower leakage current * radiation hardness * high reverse voltage capability (up to 1000V)